1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter 1. source 2. drain 3. gate 1 2 3 1gate 2drain 3source 2SK2211 features low on-resistance r ds(on) high-speed switching absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v i d 1.0 a i dp * 2.0 a power dissipation p d 1w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10ms,duty cycle 50% drain current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain to source breakdown voltage v dss i d =0.1ma,v gs =0 30 v gate to source voltage v gss i gs =0.1ma,v gs =0 20 v drain cut-off current i dss v ds =25v,v gs =0 1.0 a gate leakage current i gss v gs = 15v,v ds =0 10 a gate threshold voltage v th v ds =5v,i d =1ma 0.8 2 v forward transfer admittance y fs v ds =10v,i d =0.5a 0.5 s v gs =4v,i d =0.5a 0.48 0.75 v gs =10v,i d =0.5a 0.35 0.6 input capacitance c iss 87 pf output capacitance c oss 69 pf reverse transfer capacitance c rss 23 pf turn-on delay time t on 12 ns rise time t r 160 ns turn-off delay time t off 60 ns v ds =10v,v gs =0,f=1mhz i d =0.5a,v gs(on) =10v,r l =10 ,v dd =10v drain to source on-state resistance r ds(on) marking marking 2m 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type smd type smd type smd type ic smd type smd type smd type product specification
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